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BUT56A Dataheets PDF



Part Number BUT56A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BUT56A DatasheetBUT56A Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base volt.

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.25 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5V CONDITIONS www.datasheet4u.com BUT56 BUT56A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 5.0 2.0 1.0 2.0 1.0 2.0 15 5.5 4 10 MHz 45 V V V V(BR)EBO VCEsat VBEsat Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage BUT56 BUT56A ICES Collector cut-off current mA hFE-1 DC current gain Switching times toff tf Turn-off time Fall time 4 1 µs µs IC=4A ;IB1=-IB2=1.25A tp=20µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com BUT56 BUT56A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 .


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