BUV26

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV26 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 90 7 14 25 4 6 85 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance junction to mounting base MAX 1.92 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUV26 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IC=6A ;IB=0.6 A IC=12A; IB=1.2A IC=6A ;IB=0.6 A IC=12A; IB=1.2A 90 V Collector-emitter saturation voltage 0.6 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 1.2 V Base-emitter saturation voltage 2.0 V...