Power Management
SMCT TA20N20A10
Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet
Description
This voltage control...
Description
SMCT TA20N20A10
Advanced Pulse Power Device N-MOS VCS, ThinPakTM Preliminary Data Sheet
Description
This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. The VCS features the high peak current capability and low Onwww.datasheet4u.com state voltage drop common to SCR thyristors combined with extremely high dI/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications. The ThinPakTM Package is a perforated, metalized ceramic substrate attached to the silicon using 302oC solder. An epoxy underfill is applied to protect the high voltage termination from debris. All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part. It's small size and low profile make it extremely attractive to high dI/dt applications where stray series inductance must be kept to a minimum.
Package
Gate Return Bond Area Gate Bond Area
Cathode Bond Area
Anode Bond Area Opposite side
ThinPakTM
Anode (A)
Schematic Symbol
Features
l l l l 2000V Peak Off-State Voltage 20A Continuous Rating 4kA Surge Current Capability High dI/dt Capability l l l Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode (K)
Absolute Maximum Ratings
SYMBOL Peak Off-State Voltage Peak Reverse Voltage Off-State ...
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