FQP11N40C. 11N40C Datasheet

11N40C FQP11N40C. Datasheet pdf. Equivalent

Part 11N40C
Description FQP11N40C
Feature FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET FQP11N40C / FQPF11N40C N-Channel QFET® MOSFET 400 V.
Manufacture Fairchild Semiconductor
Datasheet
Download 11N40C Datasheet



11N40C
FQP11N40C / FQPF11N40C
N-Channel QFET® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Features
• 10.5 A, 400 V, RDS(on) = 530 m(Max.) @ VGS = 10 V,
ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP11N40C FQPF11N40C
400
10.5 10.5 *
6.6 6.6 *
42 42 *
± 30
360
11
13.5
4.5
135 44
1.07 0.35
-55 to +150
300
FQP11N40C
0.93
62.5
FQPF11N40C
2.86
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
1
www.fairchildsemi.com



11N40C
Package Marking and Ordering Information
Device Marking
FQP11N40C
FQPF11N40C
Device
FQP11N40C
FQPF11N40C
Package
TO-220
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Min Typ Max Unit
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 5.25 A
VDS = 40 V, ID = 5.25 A
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 200 V, ID = 10.5 A,
RG = 25 Ω
VDS = 320 V, ID = 10.5 A,
VGS = 10 V
(Note 4)
(Note 4)
400
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
-- -- V
0.54 -- V/°C
-- 1 μA
-- 10 μA
-- 100 nA
--
-100
nA
-- 4.0
0.43 0.53
7.1 --
V
Ω
S
840 1090
250 325
85 110
pF
pF
pF
14 40 ns
89 190 ns
81 170 ns
81 170 ns
28 35 nC
4 -- nC
15 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 10.5 A
trr Reverse Recovery Time
VGS = 0 V, IS = 10.5 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
-- -- 10.5 A
-- -- 42 A
-- -- 1.4 V
-- 290 -- ns
-- 2.4 -- μC
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
2
www.fairchildsemi.com





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