and mixer. NE600 Datasheet

NE600 mixer. Datasheet pdf. Equivalent

NE600 Datasheet
Recommendation NE600 Datasheet
Part NE600
Description 1GHz LNA and mixer
Feature NE600; Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION The NE/SA60.
Manufacture NXP Semiconductors
Datasheet
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NXP Semiconductors NE600
Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
DESCRIPTION
The NE/SA600 is a combined low noise amplifier (LNA) and mixer
designed for high-performance low-power communication systems
from 800-1200MHwz.wTwh.dealtoaws-hneoeist4eup.creoammplifier has a 2dB noise
figure at 900MHz with 16dB gain and an IM3 intercept of -10dBm at
the input. Input and output impedances are 50and the gain is
stabilized by on-chip compensation to vary less than ±0.5dB over
the -40 to +85°C temperature range. The wide-dynamic-range
mixer has a 14dB noise figure and IM3 intercept of +6dBm at the
input at 900MHz. Mixer input impedance is 50with an
open-collector output. The chip incorporates an option so the LNA
can be disabled and replaced by a through connection. The
amplifier IM3 intercept increases to +26dBm in this mode; thus, large
signals can be handled. The nominal current drawn from a single
5V supply is 13mA and 4.2mA in the LNA thru mode.
FEATURES
Low current consumption: 13mA nominal, 4.2mA in the LNA thru
mode
Excellent noise figure: 2dB for the amplifier and 14dB for the
mixer at 900MHz
Excellent gain stability versus temperature
Switchable overload capability
Amplifier matched to 50
Mixer input matched to 50
Oscillator input matched to 50
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Small Outline (SO) package (Surface-mount)
14-Pin Plastic Small Outline (SO) package (Surface-mount)
PIN CONFIGURATION
D Package
VCC
GNDB
RF INA
GNDA1
BYPASS
1
2
3
4
5
GNDLO
LOIN
6
7
14 VCCMX
13 IFOUT
12 GNDMX
11 RF INMX
10 GNDA2
9 RF OUTA
8 ENABLE
Figure 1. Pin Configuration
SR00082
APPLICATIONS
900MHz front end for GSM/AMPS/TACS/ hand-held units
RF data links
UHF frequency conversion
Portable radio
Spread spectrum receivers
900MHz cordless phones
TEMPERATURE RANGE
0 to +70°C
-40 to +85°C
ORDER CODE
NE600D
SA600D
DWG #
SOT108-1
SOT108-1
BLOCK DIAGRAM
VCCMX
14
IF OUT
13
GAIN
TEMP.
COMP.
2
1
BIAS
1
VCC
2
GND B
GNDMX
12
RFINMX
11
GND A2
10
RFOUTA
9
RF
IF LO
LNA
3
RF INA
4
GND A1
5
BYPASS
Figure 2. Block Diagram
6
GND LO
ENABLE
8
AMP
POWER
DOWN
7
LO IN
SR00083
1993 Dec 15
47 853-1659 11649



NXP Semiconductors NE600
Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
ABSOLUTE MAXIMUM RATINGS
SYMBOL
VCC, VCCMX
VIN
V
G
PD
PARAMETER
wSwuwp.pdlaytavsohlteaegte41u.com
Voltage applied to any other pin
VCC to VCCMX
Any GND pin to any other GND pin
Power dissipation, TA = 25°C (still air)2
14-Pin Plastic SO
RATING
-0.3 to +6.0
-0.3 to (VCC+0.3)
-0.3 to +0.3
-0.3 to +0.3
980
TJMAX
PMAX
TSTG
Maximum operating junction temperature
Maximum power input/output
Storage temperature range
150
+20
–65 to +150
NOTE:
1. Transients exceeding 9V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA:
14-Pin SO:
θJA = 125°C/W
3. CAUTION: The NE/SA600 is built on a BiCMOS process and is sensitive to electrostatic discharge.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC, VCCMX
Supply voltage
PARAMETER
Operating ambient temperature range
NE Grade
TA SA Grade
Operating junction temperature
NE Grade
TJ SA Grade
RATING
4.5 to 5.5
0 to +70
-40 to +85
0 to +90
-40 to +105
UNITS
V
V
V
V
mW
°C
dBm
°C
UNITS
V
°C
°C
°C
°C
DC ELECTRICAL CHARACTERISTICS1,2
VCC = VCCMX = +5V, TA = 25°C; Test Figure 1, unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN –3σ
ICC Supply current (Pin 1, 13, 14)
Enable input high
Enable input low
10 11
3.2 3.6
VT Enable logic threshold voltage
1.12 1.17
VIH Logic 1 level: LNA gain mode
2.0
VIL Logic 0 level: LNA thru mode
–0.3
IIL Enable input current
Enable = 0.4V
-1
IIH Enable input current
Enable = 2.4V
-1
VLNA–IN LNA input bias voltage
Enable input high
VLNA–OU LNA output bias voltage
T
Enable input high
VBY LNA bypass bias voltage
Enable input high
VMX–IN Mixer RF input bias voltage
VLO–IN Mixer LO input bias voltage
NOTE:
1. The ENABLE input must be connected to a valid logic level for proper operation of the NE/SA600.
LIMITS
TYP
13.0
4.2
1.27
0
0
0.78
1.27
1.05
1.43
3.35
+3σ
15
4.8
1.37
MAX
16
5.2
1.42
VCC
0.8
1
1
2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
UNITS
mA
V
V
V
µA
µA
V
V
V
V
V
1993 Dec 15
48



NXP Semiconductors NE600
Philips Semiconductors
1GHz LNA and mixer
Product specification
NE/SA600
AC ELECTRICAL CHARACTERISTICS1,2
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
–3σ TYP +3σ
UNITS
LNAw(VwCwC.d=aVtaCsChMeeXt4=u+.c5oVm, TA = 25°C; Enable = Hi, Test Figure 1, unless otherwise stated.)
S21
S21
S21/T
S21/T
S21/f
S12
S11
S22
P-1dB
IP3
Amplifier gain
Amplifier gain in thru mode
Gain temperature sensitivity enabled
Gain temperature sensitivity in thru mode
Gain frequency variation
Amplifier reverse isolation
Amplifier input match3
Amplifier output match
Amplifier input 1dB gain compression
Amp input 3rd-order intercept
Amp input 3rd-order intercept (thru mode)
900MHz
Enable = LO, 900MHz
900MHz
Enable = LO, 900MHz
800MHz - 1.2GHz
900MHz
900MHz
900MHz
900MHz
Test Fig. 2, 900MHz
Test Fig. 2, 900MHz, Enable = LO
Amplifier noise figure
900MHz
NF
Amp noise figure w/shunt 15nH inductor
at input
900MHz
14.9
–9.0
–47
–11
–16.8
–21.2
–11.6
1.9
1.7
16
-7.5
-0.008
-0.014
-0.014
-42
-10
-15
-20
-10
+26
2.2
2.0
17.1
–6.0
–37
–9
–13.2
–18.8
–8.6
2.5
2.3
dB
dB
dB/°C
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dBm
dB
dB
tON
Amplifier turn-on time
Enable Lo Hi
Coupling = 100pF
Coupling = 0.01µF
30
3
µs
ms
tOFF
Amplifier turn-off time
Enable Hi Lo
Coupling = 100pF
Coupling = 0.01µF
10
1
µs
ms
Mixer (VCC = VCCMX = +5V, TA = 25°C, Enable = Hi, fLO = 1GHz @ 0dBm, fRF = 900MHz, fIF = 100MHz, Test Fig. 1, unless otherwise stated)
VGC
PGC
S11RF
NFM
P-1dB
IP3INT
IP2INT
GRFM-IF
GLO-IF
GLO-RFM
S11LO
GLO-RF
GRFO-RFM
Mixer voltage conversion gain
Mixer power conversion gain
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
Mixer LO feedthrough
Local oscillator to mixer input feedthrough
LO input match
Local oscillator to RF input feedthrough
Filter feedthrough
RL1 = RL2 = 1k
RL1 = RL2 = 1k
900MHz
Test Fig. 3, 900MHz, fIF = 80MHz
900MHz
900MHz
900MHz
900MHz, CIF = 3pF
900MHz, CIF = 3pF
900MHz
900MHz
900MHz
900MHz
9.5
–3.05
–23
12.2
–5.3
+5
+18
–24
10.4
–2.6
-20
14
-4
+6
+20
–7
-10
-33
–20
-46
-39
11.3
–2.15
–17
15.8
–2.7
+7
+22
–16
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
LNA + Mixer (VCC=VCCMX=+5V, TA=25°C, Enable=Hi, fLO=1GHz @ 0dBm, fRF = 900MHz, fIF = 100MHz, Test Fig. 1, unless otherwise
stated)
PGC
NF
Overall power conversion gain
Overall noise figure
13.4 dB
3.5 dB
IP3 Overall input 3rd-order intercept
–13 dBm
NOTE:
1. All meausrements include the effects of the NE/SA600 Evaluation Board (see Figure ) unless otherwise noted. Measurement system
impedance is 50.
2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
3. With a shunt 15nH inductor at the input of the LNA, the value of S11 is typically –15dB.
1993 Dec 15
49





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