2SC6090LS. C6090LS Datasheet

C6090LS 2SC6090LS. Datasheet pdf. Equivalent

C6090LS Datasheet
Recommendation C6090LS Datasheet
Part C6090LS
Description 2SC6090LS
Feature C6090LS; Ordering number : ENA0996 2SC6090LS SANYO Semiconductors DATA SHEET www.datasheet4u.com 2SC6090L.
Manufacture Sanyo Semicon Device
Datasheet
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Sanyo Semicon Device C6090LS
Ordering number : ENA0996
2SC6090LS
SANYO Semiconductors
DATA SHEET
www.datasheet4u.com
2SC6090LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
Adoption of high reliability HVP process.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
VEB=4V, IC=0A
Ratings
1500
700
5
10
25
2.0
35
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
700
Ratings
typ
max
Unit
10 µA
1.0 mA
V
1.0 mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TI IM TC-00000005 No. A0996-1/4



Sanyo Semicon Device C6090LS
2SC6090LS
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Fall Time
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Package Dimensions
unit : mm (typ)
7509-003
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
tf
10.0
3.2
4.5
2.8
0.9
1.2 1.2
0.75 0.7
Conditions
IC=7.2A, IB=1.44A
IC=7.2A, IB=1.44A
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=5A, IB1=1A, IB2=--2A
Ratings
min typ
15
5
max
3
1.5
Unit
V
V
7
0.2 µs
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --5V
OUTPUT
RL
40
+
470µF
VCC=200V
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
12 IC -- VCE
1.8A 1.6A 1.4A 1.2A 2.0A
10
8 1.0A
0.8A
0.6A
6
0.4A
4 0.2A
2
IB=0A
0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03004
hFE -- IC
100
7 Ta=120°C
VCE=5V
5 25°C
3 --40°C
2
10
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03006
12 IC -- VBE
VCE=5V
10
8
6
4
2
0
0
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT03005
VCE(sat) -- IC
IC / IB=5
25°C
Ta=120°C--40°C
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03007
No. A0996-2/4



Sanyo Semicon Device C6090LS
2SC6090LS
SW Time -- IC
7
5 tstg
3
2
1.0
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5
3
2 VCC=200V
IC / IB1=5
tf
0.1
IB2 / IB1=2
R load
7
0.1
23
5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
5
3 ICP=25A
2
IC=10A
10
7
5
3
2
1.0
7
5
DC operation
3
2
5 7 10
IT13088
0.1
7
5
3
2
Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
2.5 PC -- Ta
5 7 1000
IT13094
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
0.1
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
100
40
SW Time -- IB2
tstg
VCC=200V
IC=5A
IB1=1A
R load
tf
23
5 7 1.0
23
57
Base Current, IB2 -- A
IT13089
Reverse Bias A S O
L=500µH
IB2= --2A
Tc=25°C
Single pulse
23
5 7 1000
23
Collector-to-Emitter Voltage, VCE -- V IT13091
PC -- Tc
35
2.0
30
1.5
1.0 No heat sink
25
20
15
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13095
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT13096
No. A0996-3/4





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