2SC6093LS. C6093LS Datasheet

C6093LS 2SC6093LS. Datasheet pdf. Equivalent

C6093LS Datasheet
Recommendation C6093LS Datasheet
Part C6093LS
Description 2SC6093LS
Feature C6093LS; Ordering number : ENA0274 2SC6093LS SANYO Semiconductors DATA SHEET www.datasheet4u.com 2SC6093L.
Manufacture Sanyo Semicon Device
Datasheet
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Sanyo Semicon Device C6093LS
Ordering number : ENA0274
2SC6093LS
SANYO Semiconductors
DATA SHEET
www.datasheet4u.com
2SC6093LS
NPN Triple Diffused Planar Silicon Transistor
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)
hFE1
hFE2
VF
tf
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
VEB=4V, IC=0A
IC=1.35A, IB=0.27A
IC=2.7A, IB=0.54A
IC=2.7A, IB=0.54A
VCE=5V, IC=0.5A
VCE=5V, IC=3A
IEC=4A
IC=1.8A, IB1=0.36A, IB2=--0.72A
Ratings
1500
800
5
5
12
2.0
25
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Ratings
min typ
800
40
0.1
10
5.3
max
10
1.0
130
0.3
2
1.5
Unit
µA
mA
V
mA
V
V
V
7.5
2V
0.2 µs
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11707KC TI IM TC-00000456 No. A0274-1/4



Sanyo Semicon Device C6093LS
Package Dimensions
unit : mm (typ)
7509-003
10.0
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3.2
0.9
1.2
0.75
123
2.55 2.55
2SC6093LS
Switching Time Test Circuit
4.5
2.8
1.2
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
PW=20µs
D.C.1%
IB1
IB2
INPUT
VR RB
50+
100µF
VBE= --5V
OUTPUT
RL=111
+
470µF
VCC=200V
5.0
4.5 1.5A
IC -- VCE
4.0
3.5
0.6A
3.0 0.5A
2.5 1.0A 0.9A 0.8A 0.7A 0.4A
0.3A
2.0 1.1A
0.2A
1.5 1.2A
1.0 1.3A
0.1A
0.05A
0.5 1.4A
0 IB=0A
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT11312
hFE -- IC
5
VCE=5V
3
2
Ta=120°C
25°C
10 --40°C
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT11314
IC -- VBE
5.0
VCE=5V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
10
7 IC / IB=5
5
1.4 1.6
IT11313
3
2
1.0
7
5
3
2
0.1
25°C Ta= --40°C
7
5 120°C
3
0.1
23
5 7 1.0
2
Collector Current, IC -- A
3
57
IT11315
No. A0274-2/4



Sanyo Semicon Device C6093LS
2SC6093LS
7 SW Time -- IC
VCC=200V
5 tstg IC / IB2=5
3
IB2 / IB1=2
R load
2
1.0
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7
5
3
2 tf
0.1
0.1
2
3
2 ICP=12A
10
7 IC=5A
5
3
2
3 5 7 1.0
2
Collector Current, IC -- A
Forward Bias A S O
3
57
IT11316
1.0
7
5
3
2
0.1
7
5
3
2 Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10
2 3 5 7 100
23
Collector-to-Emitter Voltage, VCE -- V
2.5 PC -- Ta
5 7 1000
IT11318
SW Time -- IB2
10
VCC=200V
7 IC=1.8A
5 IB1=0.36A
3 tstg R load
2
1.0
7
5
3
2
0.1
0.1
3
2
10
7
5
3
2
23
5 7 1.0
Base Current, IB2 -- A
Reverse Bias A S O
23
IT11317
L=500µH
IB2= --1.0A
Tc=25°C
Single pulse
1.0
7
5
3
2
0.1
10
30
2 3 5 7 100 2 3 5 7 1000 2 3 5
Collector-to-Emitter Voltage, VCE -- V IT11319
PC -- Tc
2.0
1.5
1.0 No heat sink
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11320
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11321
No. A0274-3/4





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