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2SC5387 Datasheet, Equivalent, Power Transistor.

Silicon NPN Power Transistor

Silicon NPN Power Transistor

 

 

 

Part 2SC5387
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC5387 DESCRIPTION High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Horizontal defle ction output for high resolution displa y, color TV.
·High speed switching app lications.
ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V I C Collector Current- C .
Manufacture Inchange
Datasheet
Download 2SC5387 Datasheet
Part 2SC5387
Description Silicon NPN Power Transistor
Feature isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC5387 DESCRIPTION High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Horizontal defle ction output for high resolution displa y, color TV.
·High speed switching app lications.
ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V I C Collector Current- C .
Manufacture Inchange
Datasheet
Download 2SC5387 Datasheet

2SC5387

2SC5387
2SC5387

2SC5387

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