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Power Transistor. 2SC5387 Datasheet

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Power Transistor. 2SC5387 Datasheet






2SC5387 Transistor. Datasheet pdf. Equivalent




2SC5387 Transistor. Datasheet pdf. Equivalent





Part

2SC5387

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC5387 DESCRIPTION High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Horizontal defle ction output for high resolution displa y, color TV. ·High speed.
Manufacture

Inchange

Datasheet
Download 2SC5387 Datasheet


Inchange 2SC5387

2SC5387; switching applications. ABSOLUTE MAXIM UM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol tage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Vol tage 5 V IC Collector Current- Cont inuous 10 A ICM Collector Current- Pulse 20 A IB Base Current- Continu ous PC Collector Power Dissipation @ TC=25℃ TJ Junction.


Inchange 2SC5387

Temperature 5 A 50 W 150 ℃ Tst g Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 is c & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5387 ELECTRICAL CHAR ACTERISTICS TC=25℃ unless otherwise s pecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector -Emitter Breakdown Voltage.


Inchange 2SC5387

IC= 10mA; IB= 0 600 V VCE(sat) Colle ctor-Emitter Saturation Voltage IC= 8A; IB= 2A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A 1.5 V ICBO Collector Cutoff Current VC B= 1200V; IE= 0 1 mA IEBO Emitter C utoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5 V 15 35 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 4.3 .

Part

2SC5387

Description

Silicon NPN Power Transistor



Feature


isc Silicon NPN Power Transistor INCHAN GE Semiconductor 2SC5387 DESCRIPTION High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device performance and reliable ope ration APPLICATIONS ·Horizontal defle ction output for high resolution displa y, color TV. ·High speed.
Manufacture

Inchange

Datasheet
Download 2SC5387 Datasheet




 2SC5387
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5387
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1200V (Min)
·High Switching Speed
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV.
·High speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current- Pulse
20
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
50
W
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
1 isc & iscsemi isregistered trademark




 2SC5387
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5387
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
35
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
4.3
7.8
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
1.7
MHz
COB
Output Capacitance
tstg
Storage Time
tf
Fall Time
IE= 0 ; VCB= 10V; ftest= 1.0MHz
ICP= 6A , IB1(end)= 1.2A;fH= 64kHz
130
pF
2.5 3.5 μs
0.15 0.3 μs
isc Websitewww.iscsemi.cn
2
isc & iscsemi isregistered trademark




 2SC5387
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5387
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc Websitewww.iscsemi.cn
3
isc & iscsemi isregistered trademark



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