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2SC5387 Datasheet, Equivalent, Power Transistor.Silicon NPN Power Transistor Silicon NPN Power Transistor |
　
　
　
| Part | 2SC5387 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHAN GE Semiconductor
2SC5387
DESCRIPTION Â ·High Breakdown Voltage-
: VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device
performance and reliable ope ration
APPLICATIONS ·Horizontal defle ction output for high resolution displa y,
color TV. ·High speed switching app lications. ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V I C Collector Current- C . |
| Manufacture | Inchange |
| Datasheet |
| Part | 2SC5387 |
|---|---|
| Description | Silicon NPN Power Transistor |
| Feature | isc Silicon NPN Power Transistor
INCHAN GE Semiconductor
2SC5387
DESCRIPTION Â ·High Breakdown Voltage-
: VCBO= 1200V (Min) ·High Switching Speed ·Low Satu ration Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob ust device
performance and reliable ope ration
APPLICATIONS ·Horizontal defle ction output for high resolution displa y,
color TV. ·High speed switching app lications. ABSOLUTE MAXIMUM RATINGS(Ta =25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V I C Collector Current- C . |
| Manufacture | Inchange |
| Datasheet |
　
　
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