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POWER TRANSISTOR. BUW11A Datasheet

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POWER TRANSISTOR. BUW11A Datasheet






BUW11A TRANSISTOR. Datasheet pdf. Equivalent




BUW11A TRANSISTOR. Datasheet pdf. Equivalent





Part

BUW11A

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PN package www.dat asheet4u.com ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 B ase Collector Emitter DESCRIPTION BUW1 1 BUW11A Fig.1 simplified outline (TO- 3PN) and symbol Absolut.
Manufacture

SavantIC

Datasheet
Download BUW11A Datasheet


SavantIC BUW11A

BUW11A; e maximum ratings(Ta=25 ) SYMBOL VCBO PA RAMETER Collector-base voltage BUW11 BU W11A BUW11 BUW11A Open emitter CONDITIO NS VALUE 850 1000 400 450 9 5 10 2 4 TC =25 100 150 -65~150 UNIT V VCEO VEBO I C ICM IB IBM PT Tj Tstg Collector-emit ter voltage Emitter-base voltage Collec tor current Collector current-peak Base current Base current-peak Total power dissipation Juncti.


SavantIC BUW11A

on temperature Storage temperature Open base Open collector V V A A A A W TH ERMAL CHARACTERISTICS SYMBOL Rth j-mb P ARAMETER Thermal resistance from juncti on to mounting base MAX 1.25 UNIT K/W SavantIC Semiconductor Product Specifi cation Silicon NPN Power Transistors C HARACTERISTICS Tj=25 unless otherwise s pecified PARAMETER BUW11 IC=0.1A ; IB=0 ; L=25mH BUW11A BU.


SavantIC BUW11A

W11 BUW11A BUW11 BUW11A IC=3A; IB=0.6A C ONDITIONS www.datasheet4u.com BUW11 BU W11A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustainin g voltage V 450 VCEsat Collector-emi tter saturation voltage 1.5 IC=2.5A; I B=0.5A IC=3A; IB=0.6A 1.4 IC=2.5A; IB=0 .5A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V ; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 .

Part

BUW11A

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PN package www.dat asheet4u.com ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 B ase Collector Emitter DESCRIPTION BUW1 1 BUW11A Fig.1 simplified outline (TO- 3PN) and symbol Absolut.
Manufacture

SavantIC

Datasheet
Download BUW11A Datasheet




 BUW11A
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11 BUW11A
DESCRIPTION
·With TO-3PN package
www.dat·aHshigeeht4vuo.clotamge ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BUW11
Open emitter
BUW11A
VCEO
BUW11
Collector-emitter voltage
Open base
BUW11A
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
Open collector
IB Base current
IBM Base current-peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
850
1000
400
450
9
5
10
2
4
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.25
UNIT
K/W




 BUW11A
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW11
BUW11A
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW11 IC=3A; IB=0.6A
BUW11A IC=2.5A; IB=0.5A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW11 IC=3A; IB=0.6A
BUW11A IC=2.5A; IB=0.5A
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
For BUW11F
IC=3A ;IB1=-IB2=0.6A
For BUW11AF
IC=2.5A ;IB1=-IB2=0.5A
Product Specification
BUW11 BUW11A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.4 V
1.0
2.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2




 BUW11A
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BUW11 BUW11A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3



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