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POWER TRANSISTOR. BUW11AF Datasheet

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POWER TRANSISTOR. BUW11AF Datasheet






BUW11AF TRANSISTOR. Datasheet pdf. Equivalent




BUW11AF TRANSISTOR. Datasheet pdf. Equivalent





Part

BUW11AF

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PFa package www.da tasheet4u.com ·High voltage ;high spee d APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter l DESCRIPTION B UW11F BUW11AF Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PAR.
Manufacture

SavantIC

Datasheet
Download BUW11AF Datasheet


SavantIC BUW11AF

BUW11AF; AMETER Collector-base voltage BUW11F BUW 11AF BUW11F BUW11AF CONDITIONS Open emi tter VALUE 850 1000 400 450 9 5 10 2 4 TC=25 41 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector current-peak Bas e current Base current-peak Total power dissipation Junction temperature Stora ge temperature Op.


SavantIC BUW11AF

en base Open collector V V A A A A W T HERMAL CHARACTERISTICS SYMBOL Rth j-a P ARAMETER Thermal resistance from juncti on to ambient MAX 35 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25m H BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CO.


SavantIC BUW11AF

NDITIONS www.datasheet4u.com BUW11F BUW 11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustainin g voltage V 450 VCEsat Collector-emi tter saturation voltage 1.5 IC=2.5A; I B=0.5A IC=3A; IB=0.6A 1.4 IC=2.5A; IB=0 .5A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V ; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 35 35 V VBEsat Bas e-emitter saturati.

Part

BUW11AF

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PFa package www.da tasheet4u.com ·High voltage ;high spee d APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter l DESCRIPTION B UW11F BUW11AF Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PAR.
Manufacture

SavantIC

Datasheet
Download BUW11AF Datasheet




 BUW11AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
DESCRIPTION
·With TO-3PFa package
www.dat·aHshigeeht4vuo.clotamge ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
l
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUW11F
BUW11AF
VCEO
BUW11F
Collector-emitter voltage
BUW11AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
VALUE
850
1000
400
450
9
5
10
2
4
41
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
35
UNIT
K/W




 BUW11AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW11F
BUW11AF
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW11F IC=3A; IB=0.6A
BUW11AF IC=2.5A; IB=0.5A
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=5mA ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
For BUW11F
IC=3A ;IB1=-IB2=-0.6A
For BUW11AF
IC=2.5A ;IB1=-IB2=-0.5A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.4 V
1.0
2.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2




 BUW11AF
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BUW11F BUW11AF
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3



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