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POWER TRANSISTOR. BUW13AF Datasheet

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POWER TRANSISTOR. BUW13AF Datasheet






BUW13AF TRANSISTOR. Datasheet pdf. Equivalent




BUW13AF TRANSISTOR. Datasheet pdf. Equivalent





Part

BUW13AF

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PFa package www.da tasheet4u.com ·High voltage;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 B ase Collector Emitter l DESCRIPTION BU W13F BUW13AF Absolute maximum ratings( Ta=25 ) SYMBOL VCBO PARA.
Manufacture

SavantIC

Datasheet
Download BUW13AF Datasheet


SavantIC BUW13AF

BUW13AF; METER Collector-base voltage BUW13F BUW1 3AF BUW13F BUW13AF CONDITIONS Open emit ter VALUE 850 1000 400 450 9 15 30 6 9 TC=25 50 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector current-peak Bas e current Base current-peak Total power dissipation Junction temperature Stora ge temperature Op.


SavantIC BUW13AF

en base Open collector V V A A A A W T HERMAL CHARACTERISTICS SYMBOL Rth j-a P ARAMETER Thermal resistance from juncti on to ambient MAX 35 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER BUW13F IC=0.1A ; IB=0; L=25m H BUW13AF BUW13F BUW13AF BUW13F BUW13AF IC=10A; IB=2A CON.


SavantIC BUW13AF

DITIONS www.datasheet4u.com BUW13F BUW1 3AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emit ter saturation voltage 1.5 IC=8A; IB=1 .6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VC E=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 1 0 1.0 4.0 10 35 35 V VBEsat Base-emi tter saturation vo.

Part

BUW13AF

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-3PFa package www.da tasheet4u.com ·High voltage;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 B ase Collector Emitter l DESCRIPTION BU W13F BUW13AF Absolute maximum ratings( Ta=25 ) SYMBOL VCBO PARA.
Manufacture

SavantIC

Datasheet
Download BUW13AF Datasheet




 BUW13AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW13F BUW13AF
DESCRIPTION
·With TO-3PFa package
www.dat·aHshigeeht4vuo.clotamge;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
l
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUW13F
BUW13AF
VCEO
BUW13F
Collector-emitter voltage
BUW13AF
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB Base current
IBM Base current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
VALUE
850
1000
400
450
9
15
30
6
9
50
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
35
UNIT
K/W




 BUW13AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW13F BUW13AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BUW13F
BUW13AF
IC=0.1A ; IB=0; L=25mH
VCEsat
Collector-emitter
saturation voltage
BUW13F IC=10A; IB=2A
BUW13AF IC=8A; IB=1.6A
VBEsat
ICES
IEBO
Base-emitter
saturation voltage
BUW13F IC=10A; IB=2A
BUW13AF IC=8A; IB=1.6A
Collector cut-off current
VCE=Rated VCES; VBE=0
Tj=125
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
For BUW13F
IC=10A ;IB1=-IB2=-2A
For BUW13AF
IC=8A ;IB1=-IB2=-1.6A
MIN TYP. MAX UNIT
400
V
450
1.5 V
1.6 V
1.0
4.0
mA
10 mA
10 35
10 35
1.0 µs
4.0 µs
0.8 µs
2




 BUW13AF
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BUW13F BUW13AF
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3



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