SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-247 package www.datash...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-247 package www.datasheet4u.com ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching
regulators ·Motor control systems
PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION
BUW13W BUW13AW
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUW13W BUW13AW Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 BUW13W BUW13AW Open collector Open base CONDITIONS Open emitter VALUE 850 1000 400 450 9 15 30 6 9 175 150 -65~150 V A A A A W V UNIT V
VCEO VEBO IC ICM IB IBM PT Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 0.7 UNIT K/W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUW13W IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W BUW13AW BUW13W BUW13AW IC=10A; IB=2A CONDITIONS
www.datasheet4u.com
BUW13W BUW13AW
SYMBOL
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 450
VCEsat
Collector-emitter saturation voltage
1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 10 1.0 4.0 10 35 35
V
VBEsa...