POWER TRANSISTOR. BUX84F Datasheet

BUX84F TRANSISTOR. Datasheet pdf. Equivalent


SavantIC BUX84F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX84F BUX85F
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls systems
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolut maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BUX84F
BUX85F
VCEO
BUX84F
Collector-emitter voltage
BUX85F
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB Base current
IBM Base current-peak
Ptot Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance junction to ambient
VALUE
800
1000
400
450
10
2
3
0.75
1
18
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
55
UNIT
K/W


BUX84F Datasheet
Recommendation BUX84F Datasheet
Part BUX84F
Description (BUX84F / BUX85F) SILICON POWER TRANSISTOR
Feature BUX84F; SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX84F BUX85F www.dat.
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Datasheet
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SavantIC BUX84F
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUX84F BUX85F
CHARACTERISTICS
Tj=25 unless otherwise specified
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SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
BUX84F
BUX85F
IC=100mA ; IB=0;L=25mH
400
450
V
VCEsat-1 Collector-emitter saturation voltage IC=0.3A ;IB=0.03A
0.8 V
VCEsat-2 Collector-emitter saturation voltage IC=1A ;IB=0.2A
1V
VBEsat
ICES
IEBO
Base-emitter saturation voltage
IC=1A ;IB=0.2A
Collector cut-off current
BUX84F
BUX85F
VCES=800V; VBE=0
Tj=125
VCES=1000V; VBE=0
Tj=125
Emitter cut-off current
VEB=5V; IC=0
1.1 V
0.2
1.5
mA
0.2
1.5
1.0 mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
20 100
hFE-2
DC current gain
IC=0.5A ; VCE=5V
15
fT Transition frequency
IC=0.2A ;VCE=10V;f=1.0MHz
20 MHz
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1A ;VCC=250V
IB1=0.2A;IB2=-0.4A
0.2 0.5 µs
2 3.5 µs
0.4 µs
2



SavantIC BUX84F
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
BUX84F BUX85F
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3







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