MJ1000

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ1000 VCBO Collector-base voltage MJ1001 MJ1000 VCEO Collector-emitter voltage MJ1001 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 10 0.1 90 200 -55~200 V A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ1000 IC=0.1A ;IB=0 MJ1001 IC=3A; IB=12mA IC=8A; IB=40mA IC=3A ; VCE=3V MJ1000 ICER Collector cut-off current MJ1001 MJ1000 ICEO Collector cut-off current MJ1001 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=4A ; VCE=3V VCE=60V; RBE=1.0k@ TC=150 VCE=80V; RBE=1.0k@ TC=150 VCE=30V; IB=0 80 CONDITIONS www.datasheet4u.com MJ1000/1001 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collecto...