MJ16012

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16012 Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Ti Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 1.0 150 -65~200 UNIT V V V A A A A W W/ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.5A IC=10A ;IB=1.0A TC=100 IC=10A ;IB=1.0A TC=100 VCE=850V;RBE=50>;TC=100 VCE=850V; VBE(off)=1.5V TC=100 VEB=6V; IC=0 IC=15A ; VCE=5V VCB=10V,IE=0;...