MJ21193

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJ21193 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Complement to type MJ21194 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -400 -250 -5 -16 -30 -5 250 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com MJ21193 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-100mA ;IB=0 -250 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-8A; IB=-0.8A -1.4 V Collector-emitter saturation voltage IC=-16A; IB=-3.2A -4.0 V Base-emitter on voltage IC=-8A ; VCE=-5V -2.2 V ICEX Collector cut-off current VCE=-250V; VBE(off)=-1.5V VCE=-200V; IB=0 -100 µA ICEO Collecto...