MJE371

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJE371 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement to type MJE521 APPLICATIONS ·For use in general-purpose amplifer and switching circuits, ·Recommended for use in 5 to 20 W audio amplifiers utilizing complementary symmetry circuity PINNING(see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -4 -4 -8 -2 40 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-100mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-2.0A ;IB=-0.2A IC=-1A ; VCE=-1V VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-1V 40 MIN -40 TYP. www.datasheet4u.com MJE371 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) VBE ICBO IEBO hFE MAX UNIT V...