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MJE4341 Dataheets PDF



Part Number MJE4341
Manufacturers SavantIC
Logo SavantIC
Description (MJE4340 - MJE4343) SILICON POWER TRANSISTOR
Datasheet MJE4341 DatasheetMJE4341 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4350/4351/4352/4353 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4340/4341/4342/4343 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PAR.

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package www.datasheet4u.com ·Respectively complement to type MJE4350/4351/4352/4353 ·DC current gain hFE=8(Min)@IC=16A APPLICATIONS ·For use in high power audio amplifier and switching regulator circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE4340/4341/4342/4343 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE4340 VCBO Collector-base voltage MJE4341 MJE4342 MJE4343 MJE4340 VCEO Collector-emitter voltage MJE4341 MJE4342 MJE4343 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 160 100 120 140 160 7 16 20 5 125 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE4340 MJE4341 IC=100mA ;IB=0 MJE4342 MJE4343 VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE4340 MJE4341 MJE4342 MJE4343 ICEX ICBO IEBO hFE-1 hFE-2 COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=8A ;IB=0.8A IC=16A; IB=2.0A IC=16A; IB=2.0A IC=16A ; VCE=4V VCE=50V; IB=0 VCE=60V; IB=0 www.datasheet4u.com MJE4340/4341/4342/4343 SYMBOL CONDITIONS MIN 100 120 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 140 160 2.0 3.5 3.9 3.9 V V V V ICEO Collector cut-off current 0.75 VCE=70V; IB=0 VCE=80V; IB=0 VCE=RatedVCBO; VBE=1.5V TC=150 VCB=RatedVCB; IE=0 VEB=7V; IC=0 IC=8A ; VCE=2V IC=16A ; VCE=4V IE=0 ; VCB=10V;f=0.1MHz IC=-1A ; VCE=20V;f=0.5MHz 1.0 15 8 800 1.0 5.0 0.75 1.0 mA mA mA mA pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com MJE4340/4341/4342/4343 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .


MJE4340 MJE4341 MJE4342


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