MJF15030

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package www.datasheet4u.com ·Complement to type MJF15031 ·High transition frequency ·DC current gain specified to 4.0 amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc APPLICATIONS ·Designed for general-purpose amplifier and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJF15030 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 8 16 2 2 W 36 150 -65~150 UNIT V V V A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resistance ; junction to case Thermal resistance , junction to ambient MAX 3.5 62.5 UNIT /W /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A ;IB=...