DatasheetsPDF.com

MJW21191

SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 www.datasheet4u.com DESCRIPTION...


SavantIC

MJW21191

File Download Download MJW21191 Datasheet


Description
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 www.datasheet4u.com DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN 1 2 3 Emitter Collector Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -150 -150 -5 -8 -16 -2 100 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com MJW21191 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA ;IB=0 -150 V VCE(sat)-1 VCE(sat)-2 VBE(ON) Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V Collector-emitter saturation voltage IC=-8A; IB=-1.6A -2.0 V Base-emitter on voltage IC=-4A ; VCE=-2V -2.0 V ICES Collector cut-off current VCB=-150V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE-1 DC current gain IC=-4A ; VCE=-2V 15 ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)