SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJW21191
www.datasheet4u.com
DESCRIPTION...
SavantIC Semiconductor
Product Specification
Silicon
PNP Power
Transistors
MJW21191
www.datasheet4u.com
DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING
PIN 1 2 3 Emitter Collector Base DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -150 -150 -5 -8 -16 -2 100 -65~150 -65~150 UNIT V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.65 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
MJW21191
SYMBOL
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-10mA ;IB=0
-150
V
VCE(sat)-1 VCE(sat)-2 VBE(ON)
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.0
V
Collector-emitter saturation voltage
IC=-8A; IB=-1.6A
-2.0
V
Base-emitter on voltage
IC=-4A ; VCE=-2V
-2.0
V
ICES
Collector cut-off current
VCB=-150V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE-1
DC current gain
IC=-4A ; VCE=-2V
15
...