LE28F4001CTS

Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit (512k × 8) Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.) Standby Current: 20 µA (Max.) High Read/Write Reliability Sector-write Endurance Cycles: 104 10 Years Data Retention Latched Address and Data Self-timed Erase and Programming Byte Programming: 40µs (Max.) End of Write Detection:Toggle Bit/ DATA Polling Hardware/Software Data Protection JEDEC Standard Byte-Wide EEPROM Pinouts Packages Available LE28F4001CTS: 32-pin TSOP Normal(8×14mm) Product Description The LE28F4001C is a 512K ×8 CMOS sector erase, byte program EEPROM. The LE28F4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE28F4001C erases and programs with a 5-volt only power supply. LE28F4001C conforms to JEDEC standard pinouts for byte wide memories and is compatible with existing industry standard EPROM, flash EPROM and EEPROM pinouts. Featuring high performance programming, the LE28F4001C typically byte programs in 30µs. The LE28F4001C typically sector (256 bytes) erases in 2ms. Both program and erase times can be optimized using interface feature such as Toggle bit or DATA Polling to...