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PBSS4350SPN Dataheets PDF



Part Number PBSS4350SPN
Manufacturers NXP
Logo NXP
Description 2.7A NPN/PNP Low VCEsat (BISS) Transistor
Datasheet PBSS4350SPN DatasheetPBSS4350SPN Datasheet (PDF)

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4350SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4350SS PNP/PNP complement PBSS5350SS Type number 1.2 Features I I I I I Low collector-emitter saturation.

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PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4350SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4350SS PNP/PNP complement PBSS5350SS Type number 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 mA [1] Symbol Parameter TR1; NPN low VCEsat transistor VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 90 Max 50 2.7 5 130 Unit V A A mΩ NXP Semiconductors PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Quick reference data …continued Conditions open base single pulse; tp ≤ 1 ms IC = −2 A; IB = −200 mA [1] Table 2. www.datasheet4u.com Symbol Parameter TR2; PNP low VCEsat transistor VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 95 Max −50 −2.7 −5 140 Unit V A A mΩ [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 7 8 Pinning Description emitter TR1 base TR1 emitter TR2 TR1 TR2 Simplified outline 8 5 Symbol 8 7 6 5 base TR2 collector TR2 collector TR2 collector TR1 collector TR1 1 4 1 2 3 4 006aaa985 3. Ordering information Table 4. Ordering information Package Name PBSS4350SPN SO8 Description plastic small outline package; 8 leads; body width 3.9 mm Version SOT96-1 Type number 4. Marking Table 5. Marking codes Marking code 4350SPN Type number PBSS4350SPN PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 5 April 2007 2 of 19 NXP Semiconductors PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 5. Limiting values www.datasheet4u.com Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current total power dissipation Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector single pulse; tp ≤ 1 ms Min −65 −65 Max 50 50 5 2.7 5 0.5 0.55 0.87 1.43 0.75 1.2 2 150 +150 +150 Unit V V V A A A W W W W W W °C °C °C Per transistor; for the PNP transistor with negative polarity Per device Ptot total power dissipation Tamb ≤ 25 °C [1] [2] [3] Tj Tamb Tstg [1] [2] [3] junction temperature ambient temperature storage temperature Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 5 April 2007 3 of 19 NXP Semiconductors PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor www.datasheet4u.com 2.5 Ptot (W) 2.0 006aaa967 (1) 1.5 (2) 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves PBSS4350SPN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 5 April 2007 4 of 19 NXP Semiconductors PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor 6. Thermal characteristics www.datasheet4u.com Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] [3] Min - Typ - Max 227 144 87 40 Unit K/W K/W K/W K/W Per transistor Rth(j-sp) Per device Rth(j-a) thermal resistance from junction to solder point thermal resistance from junction to ambient in free air [1] [2] [3] - - 167 104 63 K/W K/W K/W [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 103 Zth(j-a) (K/W) 102 duty cycle = 1.0 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 0 1 006aaa809 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance fro.


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