PD85035S-E

PD85035-E PD85035S-E www.datasheet4u.com RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35W with 14.9dB gain @ 870MHz / 13.6V Plastic package ESD protection In compliance with the 2002/93/EC european directive PowerSO-10RF (formed lead) Description The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Part number PD85035-E PD85035S-E PD85035TR-E PD85035STR-E Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (str...