PD85035C

PD85035C www.datasheet4u.com RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85035C’s superior linearity performance makes it an ideal solution for car mobile radio. Figure 1. Pin connection 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code PD85035C Package M243 Packing Box November 2007 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents PD85035C Contents 1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characte...