Document
APTGT200DA170D3
Trench IGBT Power Module
Boost chopper
®
www.datasheet4u.com
VCES = 1700V IC = 200A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat
3
Q2 6 7
1
2
3 4 5 7 6
2
1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
A V W
Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area
TC = 25°C Tj = 125°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGT200DA170D3 – Rev 0
400A@1650V
January, 2004
Continuous Collector Current
TC = 25°C TC = 80°C TC = 25°C
Max ratings 1700 400 200 600 ±20 1250
Unit V
APTGT200DA170D3
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage www.datasheet4u.com ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Test Conditions VGE = 0V, IC = 7mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 200A RG = 6.8Ω Min
1700
Typ
Max 5 2.4 6.4 400
Unit V mA V V nA
5.2
2.0 2.4 5.8
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy
Min
Typ 17 0.6 250 100 850 120 300 100 1000 200 65
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 200A VGE = 0V IF = 200A VR = 900V di/dt =900A/µs IF = 200A VR = 900V di/dt =900A/µs
Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Typ 1.8 1.9 25 50 50 85
Max 2.2
Unit V mJ µC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t .