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APTGT225SK170G Dataheets PDF



Part Number APTGT225SK170G
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description Buck chopper Trench Field Stop IGBT Power Module
Datasheet APTGT225SK170G DatasheetAPTGT225SK170G Datasheet (PDF)

APTGT225SK170G Buck chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 225A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductanc.

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APTGT225SK170G Buck chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 VCES = 1700V IC = 225A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 OUT CR2 0/VBUS G1 E1 VBUS 0/VBUS OUT Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 450A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT225SK170G – Rev 1 July, 2006 Max ratings 1700 340 225 450 ±20 1250 Unit V A V W APTGT225SK170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current www.datasheet4u.com Typ 2.0 2.4 5.8 Max 500 2.4 6.5 600 Unit µA V V nA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 225A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω VGE = 15V Tj = 125°C VBus = 900V IC = 225A Tj = 125°C R G = 3.3Ω Min Typ 20 0.8 0.66 370 40 650 180 400 50 800 300 72 Max Unit nF ns ns mJ 70.5 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 500 750 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 225A IF = 225A VR = 900V di/dt =2400A/µs mJ www.microsemi.com 2-5 APTGT225SK170G – Rev 1 July, 2006 225 1.8 1.9 385 490 57 93 26 52 2.2 V ns µC APTGT225SK170G Symbol Characteristic RthJC TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.1 0.18 150 125 100 5 3.5 280 Unit °C/W V °C N.m g VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz www.datasheet4u.com 3500 -40 -40 -40 3 2 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT225SK170G – Rev 1 July, 2006 APTGT225SK170G Typical Performance Curve Output Characteristics (VGE =15V) 450 400 350 300 IC (A) 250 200 150 100 50 0 0 1 2 V CE (V) 3 4 TJ=125°C TJ=25°C Output Characteristics 450 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE (V) 4 5 V GE=9V VGE =13V VGE =15V T J = 125°C VGE=20V www.datasheet4u.com IC (A) 450 400 350 300 IC (A) 250 200 150 100 50 0 5 6 Transfert Characteristics T J=25°C 180 150 120 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 3.3Ω T J = 125°C Eon Eoff T J=125°C E (mJ) 90 Er 60 T J=125°C 30 0 7 8 9 VGE (V) 10 11 12 13 0 100 200 IC (A) 300 400 500 Switching Energy Losses vs Gate Resistance 180 150 120 E (mJ) 90 60 30 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 20 VCE = 900V VGE =15V IC = 225A T J = 125°C Eon Reverse Bias Safe Operating Area 500 400 IC (A) 300 200 100 0 0 400 800 1200 1600 2000 V CE (V) VGE =15V TJ=125°C RG=3.3Ω Eoff Er maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (°C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 .


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