Document
APTGT225SK170G
Buck chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module
VBUS Q1 G1
VCES = 1700V IC = 225A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
E1
OUT
CR2
0/VBUS
G1 E1
VBUS
0/VBUS
OUT
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
450A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT225SK170G – Rev 1
July, 2006
Max ratings 1700 340 225 450 ±20 1250
Unit V A V W
APTGT225SK170G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
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Typ 2.0 2.4 5.8
Max 500 2.4 6.5 600
Unit µA V V nA
VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 225A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω VGE = 15V Tj = 125°C VBus = 900V IC = 225A Tj = 125°C R G = 3.3Ω
Min
Typ 20 0.8 0.66 370 40 650 180 400 50 800 300 72
Max
Unit nF
ns
ns
mJ 70.5
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min 1700
Typ
Max 500 750
Unit V µA A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 225A
IF = 225A VR = 900V
di/dt =2400A/µs
mJ
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2-5
APTGT225SK170G – Rev 1
July, 2006
225 1.8 1.9 385 490 57 93 26 52
2.2
V ns µC
APTGT225SK170G
Symbol Characteristic RthJC TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.1 0.18 150 125 100 5 3.5 280
Unit °C/W V °C N.m g
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz www.datasheet4u.com
3500 -40 -40 -40 3 2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT225SK170G – Rev 1
July, 2006
APTGT225SK170G
Typical Performance Curve
Output Characteristics (VGE =15V) 450 400 350 300 IC (A) 250 200 150 100 50 0 0 1 2 V CE (V) 3 4
TJ=125°C TJ=25°C
Output Characteristics 450 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE (V) 4 5
V GE=9V VGE =13V VGE =15V T J = 125°C VGE=20V
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IC (A)
450 400 350 300 IC (A) 250 200 150 100 50 0 5 6
Transfert Characteristics
T J=25°C
180 150 120
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 3.3Ω T J = 125°C Eon Eoff
T J=125°C
E (mJ)
90
Er
60
T J=125°C
30 0
7
8
9 VGE (V)
10
11
12
13
0
100
200 IC (A)
300
400
500
Switching Energy Losses vs Gate Resistance 180 150 120 E (mJ) 90 60 30 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 20
VCE = 900V VGE =15V IC = 225A T J = 125°C Eon
Reverse Bias Safe Operating Area 500 400 IC (A) 300 200 100 0 0 400 800 1200 1600 2000 V CE (V)
VGE =15V TJ=125°C RG=3.3Ω
Eoff Er
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (°C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
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