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APTGT300DA170G Dataheets PDF



Part Number APTGT300DA170G
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description IGBT Power Module
Datasheet APTGT300DA170G DatasheetAPTGT300DA170G Datasheet (PDF)

APTGT300DA170G Boost chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS VCES = 1700V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Ver.

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APTGT300DA170G Boost chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS VCES = 1700V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant CR1 OUT Q2 G2 E2 0/VBUS VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 600A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300DA170G – Rev 1 July, 2006 Max ratings 1700 400 300 600 ±20 1660 Unit V A V W APTGT300DA170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic CES Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 750 2.4 6.5 600 Unit µA V V nA www.datasheet4u.com I Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω VGE = 15V Tj = 125°C VBus = 900V IC = 300A Tj = 125°C R G = 2.2Ω Min Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96 Max Unit nF ns ns mJ 94 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min 1700 Typ Max 750 1000 Unit V µA A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 300A 300 1.8 1.9 385 490 76 124 35 70 2.2 V ns µC mJ APTGT300DA170G – Rev 1 July, 2006 2-5 IF = 300A VR = 900V di/dt =3200A/µs www.microsemi.com APTGT300DA170G Symbol Characteristic RthJC TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.075 0.14 150 125 100 5 3.5 280 Unit °C/W V °C N.m g VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz www.datasheet4u.com 3500 -40 -40 -40 3 2 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300DA170G – Rev 1 www.microsemi.com 3-5 July, 2006 APTGT300DA170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 500 400 IC (A) TJ=125°C VGE =13V TJ = 125°C VGE =20V 600 500 T J=25°C www.datasheet4u.com IC (A) 400 300 200 100 0 0 1 2 VCE (V) 3 4 300 VGE=15V 200 100 0 0 1 2 3 V CE (V) 4 5 VGE=9V Transfert Characteristics 600 500 400 IC (A) 300 200 100 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 240 200 160 E (mJ) 120 80 40 0 0 3 6 9 12 Gate Resistance (ohms) 15 VCE = 900V VGE =15V IC = 300A T J = 125°C Eon TJ=125°C T J=125°C TJ=25°C 240 200 160 E (mJ) 120 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 2.2Ω T J = 125°C Eon Eoff Er 80 40 0 10 11 12 13 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 100 0 0 400 800 1200 1600 2000 VCE (V) V GE=15V T J=125°C RG=2.2Ω Eoff Er 400 500 600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (°C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.5 0.3 0.9.


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