Document
APTGT300DA170G
Boost chopper Trench + Field Stop IGBT® www.datasheet4u.com Power Module
VBUS
VCES = 1700V IC = 300A @ Tc = 80°C
Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant
CR1
OUT
Q2 G2
E2 0/VBUS
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
Reverse Bias Safe Operating Area
600A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-5
APTGT300DA170G – Rev 1
July, 2006
Max ratings 1700 400 300 600 ±20 1660
Unit V A V W
APTGT300DA170G
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic
CES
Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V
Min
Typ 2.0 2.4 5.8
Max 750 2.4 6.5 600
Unit µA V V nA
www.datasheet4u.com I Zero
Gate Voltage Collector Current
VCE(sat) VGE(th) IGES
Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 300A R G = 2.2Ω VGE = 15V Tj = 125°C VBus = 900V IC = 300A Tj = 125°C R G = 2.2Ω
Min
Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96
Max
Unit nF
ns
ns
mJ 94
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Min 1700
Typ
Max 750 1000
Unit V µA A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 300A
300 1.8 1.9 385 490 76 124 35 70
2.2
V ns µC mJ
APTGT300DA170G – Rev 1 July, 2006 2-5
IF = 300A VR = 900V
di/dt =3200A/µs
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APTGT300DA170G
Symbol Characteristic RthJC TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.075 0.14 150 125 100 5 3.5 280
Unit °C/W V °C N.m g
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz www.datasheet4u.com
3500 -40 -40 -40 3 2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300DA170G – Rev 1
www.microsemi.com
3-5
July, 2006
APTGT300DA170G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 600 500 400 IC (A)
TJ=125°C VGE =13V TJ = 125°C VGE =20V
600 500
T J=25°C
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IC (A)
400 300 200 100 0 0 1 2 VCE (V) 3 4
300
VGE=15V
200 100 0 0 1 2 3 V CE (V) 4 5
VGE=9V
Transfert Characteristics 600 500 400 IC (A) 300 200 100 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 240 200 160 E (mJ) 120 80 40 0 0 3 6 9 12 Gate Resistance (ohms) 15
VCE = 900V VGE =15V IC = 300A T J = 125°C Eon TJ=125°C T J=125°C TJ=25°C
240 200 160 E (mJ) 120
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 2.2Ω T J = 125°C Eon Eoff
Er
80 40 0 10 11 12 13 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 100 0 0 400 800 1200 1600 2000 VCE (V)
V GE=15V T J=125°C RG=2.2Ω Eoff Er
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (°C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.5 0.3 0.9.