IRFB17N50L Datasheet PDF
Posted May 26, 2009 (Stock #: 643217)
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
130 33 59 Single
0.28
D
TO-220AB
G
S D G
ORDERING INFORMATION
Package Lead (Pb)-free SnPb
S N-Channel MOSFET
FEATURES
• Low Gate Charge Qg results in Simple Drive Requirement
• Improved G
More View
ate, Avalanche and Dynamic dV/dt Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Low trr and Soft Diode Recovery • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • ZVS and High Frequency Circuit • PWM Inverters
TO-220AB IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 16 A (see fig. 12). c. ISD 16 A, dI/dt 347 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
LIMIT 500 ± 30 16 11 64 1.8 390 16 22 220 13
- 55 to + 150 300d 10 1.1
UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098 S11-0514-Rev. B, 21-Mar-11
www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 0.56
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.9 Ab
VDS = 5
Similar Datasheet