IRFB17N50LPBF

PD - 95123 www.datasheet4u.com IRFB17N50LPbF SMPS MOSFET VDSS 500V Applications l l l l l l HEXFET® Power MOSFET Benefits l l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters Lead-Free RDS(on) typ. 0.28Ω ID 16A Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode Parameter Max. 16 11 64 220 1.8 ± 30 13 -55 to + 150 300 10 TO-220AB Units A W W/°C V V/ns Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw °C lbft.in(N.m) Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D 16 MOSFET symbol ––– ––– showing the A G 64 integral reverse ––– ––– S p-n junction diode. ––– ––– 1.5 V TJ = 25°...