MMBT2222

MMBT2222 MMBT2222 www.datasheet4u.com NPN General Purpose Amplifier Sourced from process 19. C E B SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 30 60 5.0 0.6 -55 ~ 150 Units V V V A °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 125°C VEB = 3.0V, IC = 0 IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V 35 50 75 100 50 30 Min. 30 60 5.0 10 10 10 Max. Units V V V µA µA nA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics 300 VC...