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SKIIP25AC12T4V1 Dataheets PDF



Part Number SKIIP25AC12T4V1
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SKIIP25AC12T4V1 DatasheetSKIIP25AC12T4V1 Datasheet (PDF)

SKiiP 25AC12T4V1 MiniSKiiP® 2 SKiiP 25AC12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* • Inverter up to 26 kVA • Typical motor power 15 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) AC Absolute Ma.

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SKiiP 25AC12T4V1 MiniSKiiP® 2 SKiiP 25AC12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* • Inverter up to 26 kVA • Typical motor power 15 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) AC Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC IC Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode IF λpaste=0.8 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IF λpaste=2.5 W/(mK) Ts = 25 °C Tj = 175 °C Ts = 70 °C IFnom IFRM IFRM = 3 x IFnom IFSM 10 ms, sin 180°, Tj = 150 °C Tj Module It(RMS) Tterminal = 80 °C, 20 A per spring Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 50 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 2 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf VCC = 600 V Tj = 150 °C IC = 50 A RG on = 12 Ω RG off = 12 Ω Tj = 150 °C Tj = 150 °C di/dton = 1300 A/µs Tj = 150 °C di/dtoff = 640 A/µs Tj = 150 °C Eoff VGE = +15/-15 V Tj = 150 °C Rth(j-s) Rth(j-s) per IGBT, λpaste=0.8 W/(mK) per IGBT, λpaste=2.5 W/(mK) © by SEMIKRON Rev. 4.0 – 04.05.2016 Values 1200 69 56 78 64 50 150 -20 ... 20 10 -40 ... 175 60 48 68 55 50 150 270 -40 ... 175 100 -40 ... 125 2500 Unit V A A A A A A V µs °C A A A A A A A °C A °C V min. typ. max. Unit 1.85 2.10 V 2.20 2.40 V 0.80 0.90 V 0.70 0.80 V 21 24 mΩ 30 32 mΩ 5 5.8 6.5 V 0.1 0.3 mA 2.77 nF 0.21 nF 0.16 nF 283 nC 4.0 Ω 54 ns 36 ns 6 mJ 340 ns 70 ns 4.5 mJ 0.71 K/W 0.56 K/W 1 SKiiP 25AC12T4V1 MiniSKiiP® 2 SKiiP 25AC12T4V1 Features • Trench 4 IGBTs • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* • Inverter up to 26 kVA • Typical motor power 15 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) Characteristics Symbol Conditions Inverse - Diode VF = VEC IF = 50 A VGE = 0 V chiplevel Tj = 25 °C Tj = 150 °C VF0 chiplevel Tj = 25 °C Tj = 150 °C rF IRRM Qrr Err Rth(j-s) Rth(j-s) chiplevel Tj = 25 °C Tj = 150 °C IF = 50 A Tj = 150 °C di/dtoff = 1400 A/µs VGE = +15/-15 V Tj = 150 °C VCC = 600 V Tj = 150 °C per Diode, λpaste=0.8 W/(mK) per Diode, λpaste=2.5 W/(mK) Module LCE Ms to heat sink w Temperature Sensor R100 R(T) Tr=100°C (R25=1000Ω) R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 min. 2 typ. 2.22 2.18 1.30 0.90 18 26 51 8 3.2 0.95 0.78 - 55 1670 ± 3% max. Unit 2.54 V 2.50 V 1.50 V 1.10 V 21 mΩ 28 mΩ A µC mJ K/W K/W nH 2.5 Nm g Ω AC 2 Rev. 4.0 – 04.05.2016 © by SEMIKRON SKiiP 25AC12T4V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4.0 – 04.05.2016 3 SKiiP 25AC12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4.0 – 04.05.2016 © by SEMIKRON SKiiP 25AC12T4V1 pinout, dimensions pinout © by SEMIKRON Rev. 4.0 – 04.05.2016 5 SKiiP 25AC12T4V1 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be .


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