Document
SKiiP 25AC12T4V1
MiniSKiiP® 2
SKiiP 25AC12T4V1 Features
• Trench 4 IGBTs • Robust and soft freewheeling diodes in
CAL technology • Highly reliable spring contacts for
electrical connections • UL recognised: File no. E63532
Typical Applications*
• Inverter up to 26 kVA • Typical motor power 15 kW
Remarks
• VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)
AC
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
VCES IC
IC
Tj = 25 °C
λpaste=0.8 W/(mK) Tj = 175 °C
λpaste=2.5 W/(mK) Tj = 175 °C
Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C
ICnom
ICRM VGES
tpsc
Tj
ICRM = 3 x ICnom
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse - Diode
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
10 ms, sin 180°, Tj = 150 °C
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
Inverter - IGBT
VCE(sat)
IC = 50 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VCE0
chiplevel
Tj = 25 °C Tj = 150 °C
rCE
VGE = 15 V
chiplevel
Tj = 25 °C Tj = 150 °C
VGE(th)
VGE = VCE, IC = 2 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies Coes Cres
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
QG
- 8 V...+ 15 V
RGint
Tj = 25 °C
td(on) tr Eon td(off) tf
VCC = 600 V
Tj = 150 °C
IC = 50 A RG on = 12 Ω RG off = 12 Ω
Tj = 150 °C Tj = 150 °C
di/dton = 1300 A/µs Tj = 150 °C
di/dtoff = 640 A/µs Tj = 150 °C
Eoff
VGE = +15/-15 V Tj = 150 °C
Rth(j-s) Rth(j-s)
per IGBT, λpaste=0.8 W/(mK) per IGBT, λpaste=2.5 W/(mK)
© by SEMIKRON
Rev. 4.0 – 04.05.2016
Values
1200 69 56 78 64 50 150
-20 ... 20
10
-40 ... 175
60 48 68 55 50 150 270 -40 ... 175
100 -40 ... 125
2500
Unit
V A A A A A A V
µs
°C
A A A A A A A °C
A °C V
min.
typ.
max. Unit
1.85
2.10
V
2.20
2.40
V
0.80
0.90
V
0.70
0.80
V
21
24
mΩ
30
32
mΩ
5
5.8
6.5
V
0.1
0.3
mA
2.77
nF
0.21
nF
0.16
nF
283
nC
4.0
Ω
54
ns
36
ns
6
mJ
340
ns
70
ns
4.5
mJ
0.71
K/W
0.56
K/W
1
SKiiP 25AC12T4V1
MiniSKiiP® 2
SKiiP 25AC12T4V1
Features
• Trench 4 IGBTs • Robust and soft freewheeling diodes in
CAL technology • Highly reliable spring contacts for
electrical connections • UL recognised: File no. E63532
Typical Applications*
• Inverter up to 26 kVA • Typical motor power 15 kW
Remarks
• VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)
Characteristics
Symbol Conditions
Inverse - Diode
VF = VEC
IF = 50 A VGE = 0 V chiplevel
Tj = 25 °C Tj = 150 °C
VF0
chiplevel
Tj = 25 °C Tj = 150 °C
rF
IRRM Qrr Err Rth(j-s) Rth(j-s)
chiplevel
Tj = 25 °C Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 1400 A/µs VGE = +15/-15 V
Tj = 150 °C
VCC = 600 V
Tj = 150 °C
per Diode, λpaste=0.8 W/(mK)
per Diode, λpaste=2.5 W/(mK)
Module
LCE
Ms
to heat sink
w
Temperature Sensor
R100 R(T)
Tr=100°C (R25=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2 ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2
min. 2
typ.
2.22 2.18 1.30 0.90 18 26 51
8 3.2 0.95 0.78
-
55
1670 ± 3%
max. Unit
2.54
V
2.50
V
1.50
V
1.10
V
21
mΩ
28
mΩ
A
µC
mJ
K/W K/W
nH
2.5
Nm
g
Ω
AC 2
Rev. 4.0 – 04.05.2016
© by SEMIKRON
SKiiP 25AC12T4V1
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4.0 – 04.05.2016
3
SKiiP 25AC12T4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 4.0 – 04.05.2016
© by SEMIKRON
SKiiP 25AC12T4V1
pinout, dimensions
pinout
© by SEMIKRON
Rev. 4.0 – 04.05.2016
5
SKiiP 25AC12T4V1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be .