Document
2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4468 200 140 6 10 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4468 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
Unit
www.datasheet4u.com
µA µA
19.9±0.3
V
4.0
a b
ø3.2±0.1
2
O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.24typ tstg (µs) 4.32typ tf (µs) 0.40typ
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
A 0m
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
10 (V CE =4V)
10
0m
40
30
2
m 00
A
150
mA
A
8 Collector Current I C (A)
100m
A
8 Collector Current I C (A)
75 m A
2
6
50 mA
6
Cas
(Case
2
25˚C
2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0
˚C (
I B =10mA
0
0
1
2
3
4
–30˚C
125
(Case
20mA
1
e Te
4
1 Base-Emittor Voltage V B E (V)
Temp)
4
mp) Temp )
2
Collector-Emitter Voltage V C E (V)
(V C E =4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h FE 300 125˚C 100 25˚C –30˚C
(V C E =4V)
θ j - a (˚C /W)
h FE – I C Characteristics (Typical)
h FE – I C Temperature Characteristics (Typical)
θ j-a – t Characteristics
3
Typ
100
Transient Thermal Resistance
1 0.5
50
50
20 0.02
0.1
0.5
1
5
10
20 0.02
0.1
0.5
1
5
10
0.1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector Current I C (A)
f T – I E Characteristics (Typical)
(V C E =12V) 40 30
Safe Operating Area (Single Pulse)
100
3m
P c – T a Derating
10 Cut- off F req uency f T (M H Z ) 30 Collector Curre nt I C ( A)
10 0m
M aximum Power Dissipa ti on P C (W)
s
W
10
Typ
5
DC
ith
ms
s
In fin ite he
20
50
at si nk
1 0.5 Without Heatsink Natural Cooling
10
0 –0.02
–0.1
–1 Emitter Current I E (A)
–10
0.1 3
5
10
50
100
200
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V)
Ambient Temperature Ta(˚C)
108
.