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C4468 Dataheets PDF



Part Number C4468
Manufacturers Allegro Micro Systems
Logo Allegro Micro Systems
Description 2SC4468
Datasheet C4468 DatasheetC4468 Datasheet (PDF)

2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4468 200 140 6 10 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC4468 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hF.

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2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4468 200 140 6 10 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SC4468 10max 10max 140min 50min∗ 0.5max 20typ 250typ V MHz pF 20.0min 4.0max 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 1.4 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit www.datasheet4u.com µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 2 O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC (V) 60 RL (Ω) 12 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.5 IB2 (A) –0.5 ton (µs) 0.24typ tstg (µs) 4.32typ tf (µs) 0.40typ Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) A 0m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) 10 (V CE =4V) 10 0m 40 30 2 m 00 A 150 mA A 8 Collector Current I C (A) 100m A 8 Collector Current I C (A) 75 m A 2 6 50 mA 6 Cas (Case 2 25˚C 2 I C =10A 5A 0 0 0.5 1.0 Base Current I B (A) 1.5 2.0 0 0 ˚C ( I B =10mA 0 0 1 2 3 4 –30˚C 125 (Case 20mA 1 e Te 4 1 Base-Emittor Voltage V B E (V) Temp) 4 mp) Temp ) 2 Collector-Emitter Voltage V C E (V) (V C E =4V) 200 DC Cur rent Gain h FE DC Curr ent Gain h FE 300 125˚C 100 25˚C –30˚C (V C E =4V) θ j - a (˚C /W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 3 Typ 100 Transient Thermal Resistance 1 0.5 50 50 20 0.02 0.1 0.5 1 5 10 20 0.02 0.1 0.5 1 5 10 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =12V) 40 30 Safe Operating Area (Single Pulse) 100 3m P c – T a Derating 10 Cut- off F req uency f T (M H Z ) 30 Collector Curre nt I C ( A) 10 0m M aximum Power Dissipa ti on P C (W) s W 10 Typ 5 DC ith ms s In fin ite he 20 50 at si nk 1 0.5 Without Heatsink Natural Cooling 10 0 –0.02 –0.1 –1 Emitter Current I E (A) –10 0.1 3 5 10 50 100 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 108 .


UM2039-3W C4468 A018AN02


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