2STC2510

2STC2510 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC2510 Package TO-3P Packaging Tube Order code 2STC2510 May 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 2STC2510 1 Electrical ratings 2. Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 100 100 6 25 50 125 -65 to 150 150 Unit V V V A A W °C °C www.datasheet4u.com Table Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case _______ __max Value 1 Unit °C/W 2/7 2STC2510 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol ICBO IEBO www.datasheet4u.com Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test condit...