bipolar transistor. 2STC2510 Datasheet

2STC2510 transistor. Datasheet pdf. Equivalent

2STC2510 Datasheet
Recommendation 2STC2510 Datasheet
Part 2STC2510
Description High power NPN epitaxial planar bipolar transistor
Feature 2STC2510; 2STC2510 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■.
Manufacture STMicroelectronics
Datasheet
Download 2STC2510 Datasheet





STMicroelectronics 2STC2510
www.datasheet4u.com
2STC2510
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 100 V
Complementary to 2STA2510
Fast-switching speed
Typical ft = 20 MHz
Fully characterized at 125 oC
Applications
Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC2510
Marking
2STC2510
Package
TO-3P
Packaging
Tube
May 2008
Rev 2
1/7
www.st.com
7



STMicroelectronics 2STC2510
Electrical ratings
1 Electrical ratings
www.datasheet4u.comTable 2. Absolute maximum rating
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
PTOT
Tstg
TJ
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case _______ __max
2STC2510
Value
100
100
6
25
50
125
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Value
1
Unit
°C/W
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STMicroelectronics 2STC2510
2STC2510
2 Electrical characteristics
Electrical characteristics
www.datasheet4u.com(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 100 V
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
V(BR)EBO(1)
Emitter-base breakdown
voltage (IC = 0)
IE = 1 mA
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 12 A
VBE(1) Base-emitter voltage
VCE = 4 V
hFE DC current gain
IC = 12 A
fT Transition frequency
IC = 0.5 A
V
10 µA
10 µA
100 V
100 V
6V
IB = 1.2 A
1.5 V
IB = 12 A
1.8 V
VCE = 4 V 40
80
VCE = 12
20
MHz
1. Pulsed duration = 300 µs, duty cycle 1.5%
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