2STC4467
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 120 V
■ Compleme...
2STC4467
High power
NPN epitaxial planar bipolar
transistor
Features
■ High breakdown voltage VCEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe device is a
NPN transistor manufactured busing new BiT-LA (Bipolar
transistor for linear Oamplifier) technology. The resulting
transistor Obsolete Product(s) -shows good gain linearity behaviour.
3 2 1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
Package
Packaging
2STC4467
2STC4467
TO-3P
Tube
February 2009
Rev 3
1/8
www.st.com
8
Electrical ratings
1 Electrical ratings
2STC4467
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
120 V
VCEO Collector-emitter voltage (IB = 0)
120 V
VEBO Emitter-base voltage (IC = 0)
6V
IC Collector current
8A
ICM
)PTOT t(sTstg cTJ
Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature
roduTable 3. Thermal data
PSymbol
Parameter
Obsolete Product(s) - ObsoleteRthj-case Thermal resistance junction-case ______________ __max
16 80 -65 to 150 150
Value 1.563
A W °C °C
Unit °C/W
2/8
2STC4467
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Un...
