bipolar transistor. 2STC4467 Datasheet

2STC4467 transistor. Datasheet pdf. Equivalent

2STC4467 Datasheet
Recommendation 2STC4467 Datasheet
Part 2STC4467
Description High power NPN epitaxial planar bipolar transistor
Feature 2STC4467; 2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO.
Manufacture STMicroelectronics
Datasheet
Download 2STC4467 Datasheet





STMicroelectronics 2STC4467
2STC4467
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 120 V
Complementary to 2STA1694
Fast-switching speed
t(s)Typical ft = 20 MHz
cFully characterized at 125 oC
roduApplications
PAudio power amplifier
leteDescription
soThe device is a NPN transistor manufactured
busing new BiT-LA (Bipolar transistor for linear
Oamplifier) technology. The resulting transistor
Obsolete Product(s) -shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
Package
Packaging
2STC4467
2STC4467
TO-3P
Tube
February 2009
Rev 3
1/8
www.st.com
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STMicroelectronics 2STC4467
Electrical ratings
1 Electrical ratings
2STC4467
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
120 V
VCEO Collector-emitter voltage (IB = 0)
120 V
VEBO Emitter-base voltage (IC = 0)
6V
IC Collector current
8A
ICM
)PTOT
t(sTstg
cTJ
Collector peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
roduTable 3. Thermal data
PSymbol
Parameter
Obsolete Product(s) - ObsoleteRthj-case Thermal resistance junction-case ______________ __max
16
80
-65 to 150
150
Value
1.563
A
W
°C
°C
Unit
°C/W
2/8



STMicroelectronics 2STC4467
2STC4467
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 120 V
10 µA
Emitter cut-off current
IEBO
(IC = 0)
VEB = 6 V
t(s)V(BR)CEO(1)
Collector-emitter
voltage (IB = 0)
breakdown
IC = 50 mA
ducV(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 100 µA
ProV(BR)EBO(1)
Emitter-base
(IC = 0)
breakdown
voltage
IE = 1 mA
leteVCE(sat) (1)
Collector-emitter saturation
voltage
IC = 3 A
ohFE DC current gain
IC = 3 A
bsfT Transition frequency
IC = 0.5 A
Obsolete Product(s) - O1. Pulsed duration = 300 µs, duty cycle 1.5%
IB = 300 mA
VCE = 4 V
VCE = 12 V
10 µA
120 V
120 V
6V
1.5 V
70 140
20 MHz
3/8





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