2STC4468

2STC4468 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube Electrical ratings June 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 2STC4468 Table 1. Symbol VCBO CEO www.datasheet4u.com Absolute maximum rating Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 200 140 6 10 20 100 -65 to 150 150 Unit V V V A A W °C °C V VEBO IC ICM PTOT Tstg TJ Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 1.25 Unit °C/W 2/9 2STC4468 Electrical characteristics 1 Electrical charact...