2STC4468 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor General features ■ ■ ■ ■ ■ Preliminary data High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube Electrical ratings June 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 2STC4468 Table 1. Symbol VCBO CEO www.datasheet4u.com Absolute maximum rating Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 200 140 6 10 20 100 -65 to 150 150 Unit V V V A A W °C °C V VEBO IC ICM PTOT Tstg TJ Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 1.25 Unit °C/W 2/9 2STC4468 Electrical characteristics 1 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = 200V VEB = 6V IC = 50mA IC = 100µA IE = 1mA IC = 5A IC = 7A VCE = 5V IC = 3A IC = 5A IC = 0.5A IE = 0 IC = 5A IB = 500mA IB = 700mA IC = 5A VCE = 4V VCE = 4V VCE = 12V 70 50 20 150 MHz pF µs µs µs 140 200 6 0.5 0.7 1.3 140 Min. Typ. Max. 0.1 0.1 Unit µA µA V V V V V V www.datasheet4u.com Table 3. Symbol ICBO IEBO Collector-emitter breakdown V(BR)CEO(1) voltage (I = 0) B V(BR)CBO Collector-emitter breakdown voltage (IE = 0) Collector-emitter breakdown V(BR)EBO(1) voltage (I = 0) C VCE(sat) (1) VBE hFE fT CCBO ton tstg toff Collector-emitter saturation voltage Base-emitter voltage DC current gain Transition frequency Collector-base capacitance Resistive Load Turn-on time Storage time Fall time VCB = 10V f = 1MHz VCC = 60V 0.22 4.3 0.5 IB1 = -IB2 = 0.5A Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5% 3/9 Electrical characteristics 2STC4468 1.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Output characteristics www.datasheet4u.com Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter on voltage Figure 6. Collector current vs baseemitter voltage 4/9 2STC4468 Electrical characteristics 1.2 Figure 7. www.datasheet4u.com Test circuit Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/9 Package mechanical data 2STC4468 2 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com www.datasheet4u.com 6/9 2STC4468 Package mechanical data www.datasheet4u.com TO-3P Mechanical Data DIM. A A1 A2 b b1 b2 c D D1 E E1 E2 e L L1 L2 P Q Q1 MIN. 4.6 1.45 1.20 0.80 1.80 2.80 0.55 19.70 15.40 13.60 9.60 5.45 20 3.50 18.40 5 3.80 mm. TYP 1.50 1.40 1 MAX. 5 1.65 1.60 1.20 2.20 3.20 0.75 20.10 15.80 0.60 19.90 13.90 5.15 19.50 18.20 3.10 5.75 20.50 18.60 3.30 7/9 Revision history 2STC4468 3 Revision history Table 4. Date 21-May-2007 www.datasheet4u.com Revision history Revision 1 Initial EDOCS release Changes 8/9 2STC4468 www.datasheet4u.com Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 2STC4468 transistor Datasheet pdf - bipolar transistor. Equivalent, Catalog

bipolar transistor. 2STC4468 Datasheet

2STC4468 transistor. Datasheet pdf. Equivalent

2STC4468 Datasheet
Recommendation 2STC4468 Datasheet
Part 2STC4468
Description High power NPN epitaxial planar bipolar transistor
Feature 2STC4468; 2STC4468 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor General features ■.
Manufacture STMicroelectronics
Datasheet
Download 2STC4468 Datasheet





STMicroelectronics 2STC4468
www.datasheet4u.com
2STC4468
High power NPN epitaxial planar bipolar transistor
General features
High breakdown voltage VCEO=140V
Complementary to 2STA1695
Fast-switching speed
Typical ft =20MHz
Fully characterized at 125 oC
Applications
Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Preliminary data
3
2
1
TO-3P
Internal schematic diagram
Order codes
Part Number
2STC4468
Marking
2STC4468
Electrical ratings
Package
TO-3P
Packaging
Tube
June 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
www.st.com
9



STMicroelectronics 2STC4468
Table 1. Absolute maximum rating
Symbol
Parameter
VCBO
www.datasheetV4uC.EcOom
VEBO
IC
ICM
PTOT
Tstg
TJ
Collector-emitter voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5ms)
Total dissipation at Tc = 25°C
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case ______________ __max
2STC4468
Value
200
140
6
10
20
100
-65 to 150
150
Unit
V
V
V
A
A
W
°C
°C
Value
1.25
Unit
°C/W
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STMicroelectronics 2STC4468
2STC4468
1 Electrical characteristics
Electrical characteristics
www.datasheet4u.com(TCASE = 25°C; unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test Conditions
ICBO
Collector cut-off current
(IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CEO(1)
Collector-emitter
voltage (IB = 0)
breakdown
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
V(BR)EBO(1)
Collector-emitter
voltage (IC = 0)
breakdown
VCE(sat) (1)
Collector-emitter saturation
voltage
VBE Base-emitter voltage
hFE DC current gain
fT
CCBO
ton
tstg
toff
Transition frequency
Collector-base capacitance
Resistive Load
Turn-on time
Storage time
Fall time
VCB = 200V
VEB = 6V
IC = 50mA
IC = 100µA
IE = 1mA
IC = 5A
IC = 7A
IB = 500mA
IB = 700mA
VCE = 5V
IC = 5A
IC = 3A
IC = 5A
VCE = 4V
VCE = 4V
IC = 0.5A
VCE = 12V
IE = 0 VCB = 10V f = 1MHz
IC = 5A VCC = 60V
IB1 = -IB2 = 0.5A
Note: 1 Pulsed duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
0.1 µA
0.1 µA
140 V
200 V
6V
0.5 V
0.7 V
1.3 V
70 140
50
20 MHz
150 pF
0.22
4.3
0.5
µs
µs
µs
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