2STC5242

2STC5242 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz 3 2 1 Application ■ Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STC5242 Marking 2STC5242 Package TO-3P Packaging Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STC5242 1 www.datasheet4u.com Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at TC = 25°C Storage temperature Operating junction temperature Value 230 230 5 15 30 150 -55 to 150 150 Unit V V V A A W °C °C Table 3. Symbol RthJ-case Thermal data Parameter Thermal resistance junction-case Max Value 0.83 Unit °C/W 2/9 2STC5242 Electrical characteristics 2 www.datasheet4u.com Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol ICBO IEBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 230 V VEB = 5 V 230 230 5 IB = 800 mA VCE = 5...