2STC5948

2STC5948 www.datasheet4u.com High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC5948 Package TO-3P Packaging Tube Order code 2STC5948 May 2008 Rev 2 1/8 www.st.com 8 Electrical ratings 2STC5948 1 Electrical ratings Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 250 250 6 17 34 200 -65 to 150 150 Unit V V V A A W °C °C Table 2. www.datasheet4u.com Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 0.625 Unit °C/W 2/8 2STC5948 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 250 V VEB = 6 V IC = 50 mA...