FDMJ1023PZ

FDMJ1023PZ Dual P-Channel PowerTrench® MOSFET August 2007 FDMJ1023PZ ® Dual P-Channel PowerTrench MOSFET www.datasheet4u.com tm –20V, –2.9A, 112mΩ Features General Description This dual P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 112mΩ at VGS = –4.5V, ID = –2.9A „ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.4A „ Max rDS(on) = 210mΩ at VGS = –1.8V, ID = –2.1A „ Max rDS(on) = 300mΩ at VGS = –1.5V, ID = –1.0A „ Low gate charge, high power and current handling capability „ HBM ESD protection level > 1.5kV typical (Note 3) „ RoHS Compliant Applications „ Battery management/charger application Pin 1 S1 S2 G2 Bottom Drain Contact Q2 S2 D1 D2 S1 4 5 3 2 G2 S2 G1 G1 S1 S2 Q1 6 Bottom Drain Contact 1 S1 SC-75 MicroFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation...