STW43NM50N

STW43NM50N www.datasheet4u.com N-channel 500 V - 0.065 Ω - 37 A - TO-247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type STW43NM50N ■ ■ ■ VDSS @ Tjmax 550 V RDS(on) <0.085 Ω ID 37 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 43NM50N Package TO-247 Packaging Tube STW43NM50N November 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STW43NM50N 1 www.datasheet4u.com Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 500 ± 25 37 23 148 255 Tbd –55 to 150 150 Unit V V A A A W V/ns °C °C PTOT dv/dt...