Document
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 28 January 2004
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Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Standard level threshold s Very low on-state resistance.
1.3 Applications
s Motors, lamps, solenoids s DC-to-DC converters s Uninterruptable power supplies s General industrial applications.
1.4 Quick reference data
s VDS ≤ 75 V s Ptot ≤ 300 W s ID ≤ 75 A s RDSon ≤ 5.6 mΩ.
2. Pinning information
Table 1: 1 2 3 mb Pinning - SOT78 (TO-220AB) and SOT404 (D2-PAK), simplified outline and symbol Simplified outline
[1]
Pin Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
Symbol
mb d
mb
g s
MBB076
2 1
MBK106
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
3. Ordering information
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Table 2:
Ordering information Package Name Description Version TO-220AB D2-PAK Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78 Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Type number PHP160NQ08T PHB160NQ08T
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; tp = 0.15 ms; VDD ≤ 75 V; RGS = 50 Ω; VGS = 10 V; starting Tj = 25 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Min −55 −55 Max 75 75 ±20 75 75 240 300 +175 +175 75 240 560 Unit V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 12719
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 28 January 2004
2 of 13
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
www.datasheet4u.com 120
Pder (%) 80
03aa16
120 Ider (%) 80
03ap65
40
40
0 0 50 100 150 200 Tmb (°C)
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
ID I der = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A) Limit RDSon = VDS / ID
03ap67
tp = 10 µ s 102 1 ms
10 ms DC 10 100 ms 1s
1 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM is single pulse; VGS = 10 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12719
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 28 January 2004
3 of 13
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
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Table 4: Rth(j-mb) Rth(j-a)
Thermal characteristics Conditions Min Typ 60 50 Max 0.5 Unit K/W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient SOT78 SOT404 vertical in still air mounted on a printed-circuit board; minimum footprint.
Symbol Parameter
5.1 Transient thermal impedance
1 Zth(j-mb) (K/W) δ = 0.5
03ap66
0.2 10-1 0.1 0.05 0.02 single pulse P δ= tp T
tp T 10-2 10-4 10-3 10-2 10-1
t
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 12719
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 — 28 January 2004
4 of 13
Philips Semiconductors
PHP/PHB160NQ08T
N-channel TrenchMOS™ standard level FET
6. Characteristics
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Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 75 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitan.