Document
PD -97364
IRLS3034PbF IRLSL3034PbF
Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
G
HEXFET® Power MOSFET
D
G S
VDSS 40V RDS(on) typ. 1.4m: max. 1.7m: ID (Silicon Limited) 343A ID (Package Limited) 195A
c
D
D
S G G
D
S
D2Pak IRLS3034PbF
TO-262 IRLSL3034PbF
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
343 243 195 1372 375 2.5 ±20 4.6
c c
Units
A
d
W W/°C V V/ns
f
-55 to + 175 °C 300 10lbf in (1.1N m) 255 See Fig. 14, 15, 22a, 22b, mJ A mJ
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
d
e
d j
Thermal Resistance
Symbol
RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount)
kl
Parameter
Typ.
––– –––
Max.
0.4 40
Units
°C/W
www.irf.com
1
01/14/09
IRLS/SL3034PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
40 ––– ––– ––– 1.0 ––– ––– ––– –––
–––
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance www.datasheet4u.com VGS(th) IDSS IGSS RG(int) Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
––– 0.04 1.4 1.6 ––– ––– ––– ––– ––– 2.1
––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 5mA 1.7 VGS = 10V, ID = 195A mΩ 2.0 VGS = 4.5V, ID = 172A 2.5 V VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V 20 µA 250 VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V
g g
d
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
286 ––– ––– ––– 108 162 ––– 29 ––– ––– 54 ––– ––– 54 .