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IRLSL3034PBF Dataheets PDF



Part Number IRLSL3034PBF
Manufacturers International Rectifier
Logo International Rectifier
Description 40V Single N-Channel HEXFET Power MOSFET
Datasheet IRLSL3034PBF DatasheetIRLSL3034PBF Datasheet (PDF)

PD -97364 IRLS3034PbF IRLSL3034PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability .

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PD -97364 IRLS3034PbF IRLSL3034PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G HEXFET® Power MOSFET D G S VDSS 40V RDS(on) typ. 1.4m: max. 1.7m: ID (Silicon Limited) 343A ID (Package Limited) 195A c D D S G G D S D2Pak IRLS3034PbF TO-262 IRLSL3034PbF D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 343 243 195 1372 375 2.5 ±20 4.6 c c Units A d W W/°C V V/ns f -55 to + 175 °C 300 10lbf in (1.1N m) 255 See Fig. 14, 15, 22a, 22b, mJ A mJ x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d e d j Thermal Resistance Symbol RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) kl Parameter Typ. ––– ––– Max. 0.4 40 Units °C/W www.irf.com 1 01/14/09 IRLS/SL3034PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units 40 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance www.datasheet4u.com VGS(th) IDSS IGSS RG(int) Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance ––– 0.04 1.4 1.6 ––– ––– ––– ––– ––– 2.1 ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 5mA 1.7 VGS = 10V, ID = 195A mΩ 2.0 VGS = 4.5V, ID = 172A 2.5 V VDS = VGS, ID = 250µA VDS = 40V, VGS = 0V 20 µA 250 VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V g g d ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 286 ––– ––– ––– 108 162 ––– 29 ––– ––– 54 ––– ––– 54 .


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