IRLB3036PBF

PD - 97357 IRLB3036PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 1.9mΩ 2.4mΩ 270A 195A c TO-220AB IRLB3036PbF D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Max. 270 190 195 1100 380 2.5 ±16 8.0 c c Units A d W W/°C V V/ns °C f -55 to + 175 300 10lb in (1.1N m) 290 See Fig. 14, 15, 22a, 22b mJ A mJ Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche...