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IRLS4030-7PPBF

International Rectifier

100V Single N-Channel HEXFET Power MOSFET

PD -97371 IRLS4030-7PPbF Applications www.datasheet4u.com l DC Motor Drive l l l l HEXFET® Power MOSFET D High Effici...


International Rectifier

IRLS4030-7PPBF

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Description
PD -97371 IRLS4030-7PPbF Applications www.datasheet4u.com l DC Motor Drive l l l l HEXFET® Power MOSFET D High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G S VDSS RDS(on) typ. max. ID D 100V 3.2mΩ 3.9mΩ 190A Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G S G S S S S D2Pak 7 Pin D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 190 130 750 370 2.5 ± 16 13 -55 to + 175 300 10lbxin (1.1Nxm) 320 See Fig. 14, 15, 22a, 22b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case jk Junction-to-Ambient (PCB Mount) ij Typ. ––– ––– Max. 0.40 40 Units °C/W ww...




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