100V Single N-Channel HEXFET Power MOSFET
PD -97371
IRLS4030-7PPbF
Applications www.datasheet4u.com l DC Motor Drive
l l l l
HEXFET® Power MOSFET
D
High Effici...
Description
PD -97371
IRLS4030-7PPbF
Applications www.datasheet4u.com l DC Motor Drive
l l l l
HEXFET® Power MOSFET
D
High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
G S
VDSS RDS(on) typ. max. ID
D
100V 3.2mΩ 3.9mΩ 190A
Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
G
S G S S
S
S
D2Pak 7 Pin
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
190 130 750 370 2.5 ± 16 13 -55 to + 175 300 10lbxin (1.1Nxm) 320 See Fig. 14, 15, 22a, 22b
Units
A W W/°C V V/ns °C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f mJ A mJ
Thermal Resistance
Symbol
RθJC RθJA
Parameter
Junction-to-Case jk Junction-to-Ambient (PCB Mount) ij
Typ.
––– –––
Max.
0.40 40
Units
°C/W
ww...
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