100V Single N-Channel HEXFET Power MOSFET
PD - 97369
IRLB4030PbF
Applications l DC Motor Drive www.datasheet4u.com l High Efficiency Synchronous Rectification in...
Description
PD - 97369
IRLB4030PbF
Applications l DC Motor Drive www.datasheet4u.com l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free
HEXFET® Power MOSFET
D
G S
VDSS RDS(on) typ. max. ID
100V 3.4mΩ 4.3mΩ 180A
S G D
TO-220AB
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Max.
180 130 730 370 2.5 ± 16 21 -55 to + 175 300 10lb in (1.1N m) 305 See Fig. 14, 15, 22a, 22b,
Units
A W W/°C V V/ns °C
c
e
x
x
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
c
d
f
mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
j
Parameter
Typ.
––– 0.50 –––
...
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