PowerTrench MOSFET. FDMA1029PZ Datasheet

FDMA1029PZ Datasheet PDF, Equivalent


Part Number

FDMA1029PZ

Description

Dual P-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMA1029PZ Datasheet


FDMA1029PZ Datasheet
May 2006
FDMA1029PZ
www.datasheet4u.com
Dual P-Channel PowerTrench® MOSFET
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
PIN 1
S1 G1 D2
Features
–3.1 A, –20V. RDS(ON) = 95 m@ VGS = –4.5V
RDS(ON) = 141 m@ VGS = –2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
D1 D2
D1 G2 S2
MicroFET 2x2
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
029
FDMA1029PZ
7’’
©2006 Fairchild Semiconductor Corporation
Ratings
–20
±12
–3.1
–6
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
°C/W
Tape width
8mm
Quantity
3000 units
FDMA1029PZ Rev B (W)

FDMA1029PZ Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
www.datasheet4u.cBoVmDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
VGS = ± 12 V, VDS = 0 V
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS= –4.5 V, ID = –3.1 A, TJ=125°C
VDS = –10 V, ID = –3.1 A
VDS = –10 V, V GS = 0 V,
f = 1.0 MHz
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6
VDS = –10 V, ID = –3.1 A,
VGS = –4.5 V
–20
–0.6
–12
–1.0
4
60
88
87
–11
540
120
100
13
11
37
36
7.0
1.1
2.4
V
mV/°C
–1 µA
±10 µA
–1.5 V
mV/°C
95 m
141
140
S
pF
pF
pF
24 ns
20 ns
59 ns
58 ns
10 nC
nC
nC
FDMA1029PZ Rev B (W)


Features Datasheet pdf FDMA1029PZ Dual P-Channel PowerTrench® MOSFET May 2006 www.datasheet4u.com FDMA1029PZ Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single p ackage solution for the battery charge switch in cellular handset and other ul tra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum con duction losses. bi-directional current flow is possible. The MicroFET 2x2 pack age offers exceptional thermal performa nce for its physical size and is well s uited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 When • RoHS Complian t connected in the typical common sourc e configuration, Features • –3.1 A , –20V. RDS(ON) = 95 mΩ @ VGS = – 4.5V RDS(ON) = 141 mΩ @ VGS = –2.5V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm S1 G1 1 2 3 6 5 4 D1 G2 S2 D1 G2 S2 MicroFET 2x2 D2 Absolute Maximum Rati ngs Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Curren.
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