FDMA410NZ

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.datasheet4u.com tm Single N-Channel 1.5 V Specified PowerTrench MOSFET 20 V, 9.5 A, 23 mΩ Features „ Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A „ Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A „ Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A „ Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A „ HBM ESD protection level > 2.5 kV (Note 3) „ Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm „ RoHS Compliant ® General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Applications „ Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings 20 ±8 9.5 24 2.4 0.9 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 410 Device FDMA410NZ Package MicroFET 2X2 Reel Size 7 ...