Document
FDMA510PZ Single P-Channel PowerTrench® MOSFET
April 2008
FDMA510PZ
® Single P-Channel PowerTrench MOSFET www.datasheet4u.com
tm
–20V, –7.8A, 30mΩ
Features
General Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Max rDS(on) = 30mΩ at VGS = –4.5V, ID = –7.8A Max rDS(on) = 37mΩ at VGS = –2.5V, ID = –6.6A Max rDS(on) = 50mΩ at VGS = –1.8V, ID = –5.5A Max rDS(on) = 90mΩ at VGS = –1.5V, ID = –2.0A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3KV typical (Note 3) RoHS Compliant
Pin 1
D
D
G Bottom Drain Contact
Drain
Source
D D
1 2 3
6 5 4
D D S
G D D S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –7.8 –24 2.4 0.9 –55 to +150 Units V V A W °C
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W
Package Marking and Ordering Information
Device Marking 510 Device FDMA510PZ Package MicroFET 2X2 Reel Size 7’’ Tape Width 8mm Quantity 3000units
©2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1
1
www.fairchildsemi.com
FDMA510PZ Single P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS ∆TJ www.datasheet4u.com IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = –250µA, VGS = 0V ID = –250µA, referenced to 25°C VDS = –16V, VGS = 0V VGS = ±8V, VDS = 0V –20 –13 –1 ±10 V mV/°C µA µA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = –250µA ID = –250µA, referenced to 25°C VGS = –4.5V, ID = –7.8A VGS = –2.5V, ID = –6.6A rDS(on) Static Drain to Source On Resistance VGS = –1.8V, ID = –5.5A VGS = –1.5V, ID = –2.0A VGS = –4.5V, ID = –7.8A ,TJ = 125°C gFS Forward Transconductance VDD = –5V, ID = –7.8A –0.4 –0.7 3 27 34 46 60 36 26 30 37 50 90 40 S mΩ –1.5 V mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 1110 205 185 1480 275 280 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = –5V, ID = –7.8A VGS = –4.5V VDD = –10V, ID = –7.8A VGS = –4.5V, RGEN = 6Ω 7 9 125 64 19 2.1 4.2 14 18 200 103 27 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = –2A IF = –7.8A, di/dt = 100A/µs –0.8 66 44 –2 –1.2 106 71 A V ns nC
Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2008 Fairchild Semiconductor Corporation FDMA510PZ Rev.B1
2
www.fairchildsemi.com
FDMA510PZ Single P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
24 20
-ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -1.8V VGS = -2.5V VGS = -2V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.5
VGS = -1.5V VGS = -1.8V
2.0
VGS = -2V VGS = -2.5V
16 www.datasheet4u.com 12
1.5
VGS = -1.5V
8 4 0 0 1 2 3 4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
1.0
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -4.5V
0.5 0 4 8 12 16 20 24
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
200
SOURCE ON-RESISTANCE (mΩ)
1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.4 1.2 1.0 0.8 0.6 -75
ID = -7.8A VGS = -4.5V
rDS(on), DRAIN TO
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX
150
ID = -7.8A
100
TJ = 125oC
50
TJ = 25oC
-50
-25
0
25
50
75
100 125 150
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURC.