STL100N3LLH6

STL100N3LLH6 www.datasheet4u.com N-channel 30 V, 0.0025 Ω, 17 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Features Type STL100N3LLH6 VDSS 30 V RDS(on) max 0.0032 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. Device summary Marking 100N3LLH6 Package PowerFLAT™ (6x5) Packaging Tape and reel Order code STL100N3LLH6 April 2009 Doc ID 15569 Rev 1 1/10 www.st.com 10 Contents STL100N3LLH6 Contents 1 www.datasheet4u.com 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . ....