STB200N4F3

STP200N4F3 STB200N4F3 www.datasheet4u.com N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™ Power MOSFET Features Type STB200N4F3 STP200N4F3 ■ ■ VDSS 40V 40V RDS(on) Max <0.0040Ω <0.0044Ω ID 120A 120A Pw 300W 300W 3 1 1 2 3 100% avalanche tested Standard threshold drive D²PAK TO-220 Applications ■ Switching applications – Automotive Description Figure 1. This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. this new improved device has been specifically designed for automotive applications. Internal schematic diagram Table 1. Device summary Marking 200N4F3 200N4F3 Package D²PAK TO-220 Packaging Tape & reel Tube Order codes STB200N4F3 STP200N4F3 October 2007 Rev 2 1/14 www.st.com 14 Contents STB200N4F3 - STP200N4F3 Contents 1 www.datasheet4u.com 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...