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HMC716LP3

Hittite Microwave Corporation

Low Noise Amplifier SMT

HMC716LP3 / 716LP3E v00.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Features Noise Figure: 1 dB Gain: 18 dB...


Hittite Microwave Corporation

HMC716LP3

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Description
HMC716LP3 / 716LP3E v00.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz Features Noise Figure: 1 dB Gain: 18 dB Output IP3: +33 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3mm QFN Package: 9 mm2 5 LOW NOISE AMPLIFIERS - SMT www.datasheet4u.com Typical Applications The HMC716LP3(E) is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram General Description The HMC716LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 3.1 and 3.9 GHz. The amplifier has been optimized to provide 1 dB noise figure, 18 dB gain and +33 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC716LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifi cations TA = +25° C, Rbias = 820 Ohms for Vdd = 5V, Rbias = 47k Ohms for Vdd = 3V [1] Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) [1] Rbias resistor sets ...




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